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| ADE-208-043B(Z) HSM112WK Silicon Schottky Barrier Diode for Battery Switch Preliminary Rev.2 Feb. 1993 Features * The HSM112WK has two different (V F - I F ) chips, and can change the main battery to the backup battery automatically. * MPAK package is suitable for high density surface mounting and high speed assembly. 2 Pin Arrangement 3 1 Ordering Information Type No. HSM112WK Laser Mark S2 Package Code MPAK (Top View) 1 Anode 2 Anode 3 Cathode Absolute Maximum Ratings (Ta = 25C) Item Peak reverse voltage Forward current Junction temperature Storage temperature Symbol VRM IF Tj Tstg Value Pin 1-3 8 30 125 -55 to +125 Value Pin 2-3 10 30 125 -55 to +125 Unit V mA C C Electrical Characteristics (Ta = 25C) Item Forward voltage Symbol VF IR Pin 1-3 Pin 2-3 Pin 1-3 Reverse current Pin 2-3 Min 0.1 0.5 -- -- Typ -- -- -- -- Max 0.3 0.8 30 A 0.1 VR = 5 V Unit V Test Condition IF = 1 mA HSM112WK 10 -1 10 -2 Forward current I F (A) Reverse current I R (A) 10 -2 10 -3 10 -3 10 -4 10 -4 10 -5 10 -5 0 0.4 0.6 0.8 0.2 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage (Pin1-3) 1.0 10 -6 0 2 4 8 6 Reverse voltage VR (V) 10 Fig.2 Reverse current Vs. Reverse voltage (Pin1-3) 10 -1 10 -2 Forward current I F (A) Reverse current I R (A) 0 0.2 0.4 0.6 0.8 1.0 10 -3 10 -4 10 10 -5 10 -5 10 -6 10 -7 -6 10-7 10 -8 10 -9 10 -8 10 -9 0 2 Forward voltage VF (V) Fig.3 Forward current Vs. Forward voltage (Pin2-3) 4 8 6 Reverse voltage VR (V) 10 Fig.4 Reverse current Vs. Reverse voltage (Pin2-3) HSM112WK Package Dimensions 0.65 - 0.3 + 0.1 Unit: mm Laser Mark 0.4 - 0.05 + 0.10 0.16 - 0.06 + 0.10 3 + 0.2 - 0.6 0.1 0.65 + 0.3 - 2 0.95 1 0.95 2.8 S2 1.9 0.3 2.8 + 0.1 - 1.5 0 - 0.10 1 Anode 2 Anode 3 Cathode 0.3 HITACHI Code 1.1 - 0.1 + 0.2 MPAK(1) -- SC-59A 0.011 JEDEC Code EIAJ Code Weight (g) |
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